A substrate heater with fast response for a low current ion-implanter

A substrate heater using a 900-W tungsten lamp and a proportional-integral controller is presented. The externally generated radiation is directed onto a substrate in the target chamber. The temperature of the substrate is controlled to within +or-1 degrees C of the set temperature with a typical rise time of 5 s for a 430 degrees C change in temperature. This is achieved with negligible overshoot.<
>