Electrical characteristics of textured polysilicon oxide prepared by a low-temperature wafer loading and N/sub 2/ preannealing process

A low-temperature wafer loading and N/sub 2/ preannealing process was used to grow a thin textured polysilicon oxide. The polyoxide grown on the heavily doped polysilicon film exhibits less oxide tunneling leakage current and higher dielectric strength when the top electrode is positively biased.<
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