InP/InGaAsP double-heterostructure optoelectronic switch

The double-heterostructure optoelectronic switch (DOES), fabricated in the InP/InGaAsP material system, is demonstrated. The functional characteristics and operational parameters exhibit a lower switching voltage ( approximately=1.8 V) and a higher on-state holding current ( approximately=20 mA) than found in either the Si/SiGe- or GaAs/AlGaAs-based DOES of comparable structures and doping levels. In the on-state, optical emission is observed in a manner analogous to a light emitting diode. However, enhanced optical emission is observed when the device is biased in the regime of negative differential resistance.<
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