Formation of high-quality oxide/nitride stacked layers on rugged polysilicon electrodes by rapid thermal oxidation

It is demonstrated that the use of rapid thermal oxidation (RTO) of thin Si/sub 3/N/sub 4/ films deposited on rugged poly-Si electrodes greatly improves the reliability of the films, compared to conventional wet (steam) oxidation. Superior TDDB characteristics and suppression of capacitance loss during high-field stress have been achieved by RTO.<
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