A new technique for measuring MOSFET inversion layer mobility

An experimental technique for accurately determining both the inversion charge and the channel mobility mu of a MOSFET is presented. With this new technique, the inversion charge is measured as a function of the gate and drain voltages. This improvement allows the channel mobility to be extracted independent of drain voltage V/sub DS/ over a wide range of voltages (V/sub DS/=20-100 mV). The resulting mu (V/sub GS/) curves for different V/sub DS/ show no drastic mobility roll-off at V/sub GS/ near V/sub TH/. This suggests that the roll-off seen in the mobility data extracted using the split C-V method is probably due to inaccurate inversion charge measurements instead of Coulombic scattering.<
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