Infrared intraband laser induced in a multiple-quantum-well interband laser

A multiple-quantum-well infrared laser with phonon energy approximately= 0.1 eV is proposed in which electrons, injected into the excited level of the quantum well, are efficiently removed from the ground state level by the interband stimulated process. High carrier injection is needed to provide population inversion between these levels. Analysis shows that low temperature operation of this laser is possible for both electrical and optical carrier injection. Quantum-well materials with lower electron effective mass, such as InGaAs and InAs, are preferable for these purposes.<
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