Ion microbeam radiation system

An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of a diameter as small as 1 mu m onto a circuit or test structure with a placement accuracy of 1 mu m. The components of the system and its operation are described. Applications are described which demonstrate the capabilities of the system.<
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