Subthreshold current ion GaAs MESFETs

The authors present experimental data that show that the drain-to-source voltage dependence of the subthreshold current in GaAs MESFETs is determined by the variation of threshold voltage with drain-source voltage and not by Schottky-barrier lowering. This model, incorporating gate-to-drain and gate-to-source diode currents, is shown to be in good agreement with measured data. The model is incorporated into a GaAs circuit simulator and is suitable for GaAs IC design.<
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