A fully planar p-n-p heterojunction bipolar transistor

The fabrication of fully planar p-i-n heterojunction bipolar transistors is reported. The devices were constructed using ion implantation into AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition (MOCVD). Incremental current gains of 100 have been observed for transistors with 22 mu m*4 mu m emitters, No emitter size effects was observed.<
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