New method for measuring carrier concentration profile near a GaAs surface through a network analyzer

A method based on S-parameter measurement which precisely obtains the junction capacitance of the Schottky gate of GaAs MESFETs is proposed. In this method the junction capacitance is derived from a diode circuit simulation based on S-parameter measurements. Determination of the junction capacitance under forward-biased voltage and the carrier concentration profile near the channel surface of Schottky gates are possible with this method.<
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