Counterdoping of MOS channel (CDC)-a new technique of improving suppression of latching in insulated gate bipolar transistors

A novel technique of improving suppression of latching in insulated-gate bipolar transistors (IGBTs) is proposed and experimentally verified. By counterdoping the channel of the DMOS cell, the doping of the p-base can be increased up to a factor of two. Dynamic latching improvement of 40-80%, corresponding to the p-base doping increase, has been obtained. The degradation in forward blocking voltage was observed when the counterdoping dosage exceeds about 2*10/sup 12/ cm/sup -2/ for 600-V devices.<
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