New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product

A new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InP layers was designed. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pF and a series resistance around 3 Omega ; (RC product <2 ps) of the laser structure was observed. Using this structure a 1.3- mu m bulk laser had a nicely smooth optical response with a bandwidth well in excess of 18 GHz (the measurement limit). A fitting procedure, using the laser response transfer function, confirmed a negligible RC product (2 ps), a power limited bandwidth of about 22 GHz, and excellent RF modulation efficiency.<
>