Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures

The threshold voltage for the three different conduction components of an accumulation-mode PMOS SOI were experimentally extracted at room and liquid-helium temperatures. A deep-depletion transient effect was observed to play an important role when one of the interfaces was in inversion, even at room temperature. An intuitive physical interpretation is given for the suppression of some current components at liquid-helium temperatures. In addition, a simple model for calculating the silicon-film thickness and the doping level is presented.<
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