Modeling of the transient response of substrate traps to the substrate voltage in GaAs FETs

The transient response of hole traps, related to the substrate in GaAs FETs, following an electric pulse applied to the substrate (or back gate) is accurately modeled. The modeled transient is found to be nonexponential. Excellent agreement between the experimental data and the model is obtained. The trap filling time required for the substrate hole traps is very sensitive to the difference between the Fermi energy and the trap energy.<
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