DC characteristics of high-breakdown-voltage p-i-n diodes made by 20-MeV Si implantation in InP:Fe

A vertical p-i-n diode is made for the first time in InP:Fe using megaelectronvolt energy ion implantation, A 20-MeV Si implantation and kiloelectronvolt energy Be/P coimplantation are used to obtain a buried n/sup +/ layer and a shallow p/sup +/ layer, respectively. The junction area of the device is 2.3*10/sup -5/ cm/sup 2/ and the intrinsic region thickness is approximately=3 mu m. The device has a high breakdown voltage of 110 V, reverse leakage current of 0.1 mA/cm/sup 2/ at -80 V, off-state capacitance of 2.2 nF/cm/sup 2/ at -20 V, and a DC incremental forward resistance of 4 Omega at 40 mA.<
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