Matching properties of linear MOS capacitors

Various random error mechanisms which affect the matching of MOS capacitors have been studied in a systematic manner. For the dimensions and technology considered, normalized random error in capacitor-ratio has been observed to have an inverse square-root dependence on the capacitor-area, a linear dependence on the perimeter-to-area ratio, and a very weak dependence, n/sup 16/, on the capacitor-ratio n. Increasing the intercapacitor gap slows down its dependence on n.<
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