Monolithic GaAs W-band pseudomorphic MODFET amplifiers

A unique realization of a single-stage monolithic GaAs W-band amplifier based on InGaAs-AlGaAs pseudomorphic (PM) MODFET devices is reported. This work reflects a number of significant accomplishments: (1) superior control of MBE to grow the PM layers, (2) well-developed electron-beam 0.1 mu m mushroom-gate technology, (3) reliable physical and equivalent-circuit models of device behavior, (4) layouts that minimize parasitics, and (5) a dual-medium circuit approach consisting of coplanar waveguide (CPW) and microstrip on opposite faces of a 100 mu m-thick GaAs substrate. A peak gain of 4.5 dB at 92 GHz for one of the amplifiers was achieved. The measured gain is in good agreement with the model predictions.<
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