Heterostructure MESFET devices for VLSI applications

Manufacturing of heterostructure ICs at VLSI integration levels has heretofore not been realized. Recently, epitaxial material quality and availability has improved dramatically with the proliferation of low-pressure metalorganic-chemical-vapor-deposition (LP-MOCVD) material. In addition, the quality of GaAs IC manufacturing has steadily improved in integration level and density of interconnect. As a result, complexity consistent with the fabrication of VLSI structures is now feasible using LP-MOCVD material with H-MESFET technology. Results are presented which were obtained using the H-MESFET approach to achieve high density, VLSI complexity GaAs ICs.<
>