Characterization of in-plane strain relaxation in strained layers after mesa isolation using a newly developed plane-NBD method

We have developed the plane-NBD method and applied to characterization of strain relaxation of compressive strained SGOI layers. It was found that strain relaxation within compressive-strained SGOI layers after isolation processing were dependent on mesa structures. The plane-NBD method is unique and effective for evaluating in-plane strain distribution within small and thin strained layers in sub-mum size