A Study of Low Energy Phosphorus Implantation and Annealing in Si:C Epitaxial Films

We investigated the effect of dopant implantation and thermal annealing on substitution carbon concentration of Si:C epitaxial film. While spike annealing at T=1050 degC results in slight loss of substitution carbon (0.6%) but maintains high crystalline, phosphorus implantation induces significant loss of substitution carbon and a change of carbon depth profile. It is also observed that very abrupt junction can be formed in a Si:C epitaxial film