p-n Junction Leakage Current in Strained-Si/SGOI Diodes

In this paper, the origin of p-n junction leakage current in s-Si/SGOI diodes is investigated. It is found that generation current by bulk trap is dominant in the s-Si/SGOI p-n junction leakage current compared to diffusion current and generation current by oxide interface state and that the calculated leakage current is low enough even in Ge-on-insulator (GOI) channels at hp45 nm technology node