A Raised Source/Drain Extension pFET on Si (110) Realized by In-situ Doped Selective Epitaxy Technology

A raised source/drain extension (RSDE) pFET on (110) Si wafer is demonstrated for the first time with in-situ doped selective epitaxy technology. Roll-off has been effectively improved, resulting from the elimination of ion channeling in (110) Si. Due to the hole mobility enhancement and parasitic resistance reduction, ion of 389μA/μm (Vd= -1.0 V) has been achieved at Lmin around 30nm extracted at Ioff = 100 nA/μm, which is 83% higher than that of conventional planar (100) pFET.