High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology

We have developed a dual metal gate CMOS technology with HfSi
_x
for nMOS and Ru for pMOS on HfO
₂
gate dielectric. These gate stacks show high mobility (100% of universal mobility for electron, 80% for hole at high fields) down to T
_inv
of 1.7 nm and symmetrical low V
_t
equivalent to poly-Si/SiO
₂
. As a result, high drive currents of 780 μA/μm and 265 μA/μm at I
_off
= 1 nA/μm are achieved for V
_dd
= 1.0 V in L
_g
= 60 nm nMOS and pMOS, respectively We have applied the mobility enhancement technology to the Ru/HfO
₂
pMOS by utilizing (110)-substrate. As a result, an excellent drive current of 400 μA/μm (151% improvement over (100)-p
⁺
poly-Si/SiO
₂
) is achieved