430-V 12.4-$hboxmOmegacdot hboxcm^2$Normally off 4H-SiC Lateral JFET

This letter reports the experimental demonstration of the first 4H-SiC normally off high-voltage lateral junction field-effect transistor. The design and fabrication of such a device have been investigated. The fabricated device has a vertical channel length of 1.8
$muhboxm$
created by tilted aluminum implantation on the sidewalls of deep trenches and a lateral drift-region length of 5
$muhboxm$
. Normally off operation
$(V_ GS=hbox0 V)$
with a blocking voltage
$V_ br$
of 430 V has been achieved with a specific on-resistance
$R_ onhbox- sp$
of 12.4
$hboxmOmega cdot hboxcm^2$
, which is the lowest specific on-resistance for 4H-SiC lateral power switches reported to date, resulting in a
$V_ br^2/R_ onhbox- sp$
value of 15
$hboxMW/cm^2$
. This is among the best
$V_ br^2/R_ onhbox- sp$
figure-of-merit reported to date for 4H-SiC lateral high-voltage devices.