Barium Hexaferrite Thick Films Made by Liquid Phase Epitaxy Reflow Method

In this paper, we report on the growth of BaFe
$_12$
O
$_19$
(BaM) thick films on sapphire Al
$_2$
O
$_3$
(0001) substrate. Our goal is to fabricate barium ferrite thick films which can be self-biased for circulator applications. We have modified the liquid phase epitaxy (LPE) method by conducting the experiment in vacuum. A small piece of the melt weighing approximately 0.035 g was placed on 1
$,times,$
1 cm Al
$_2$
O
$_3$
substrate and remelted at 1200
$^circ$
C for 1 h. The thickness of our thick films grown by this reflow method range from 300 to 550
$mu$
m. The coercivities of the thick films in the perpendicular direction were about 100 Oe.