Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region

The influence of the light illumination on the drain current of polycrystalline silicon thin-film transistors is studied in this work. The increase of the output current as a result of raised light intensity is modeled, based on measured experimental data for different V
_ds
and V
_gs
values. The proposed model has been verified against the measurements and the simulated output characteristics give a good approximation in the sub-threshold region