$hboxBaSm_2hboxTi_4hboxO_12$Thin Film for High-Performance Metal–Insulator–Metal Capacitors

A high capacitance density of 4.84 fF/mum
²
and a low leakage current density of 4.28 fA/pFmiddotV were obtained for a 138-nm-thick crystalline BaSm
₂
Ti
₄
O
₁₂
(BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/mum
²
and a low leakage current of 1.24 fA/pFmiddotV. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V
²
and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/degC at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/V
²
and -738 ppm/V, respectively, with a low TCC of 169 ppm/degC at 100 kHz