Resistive Switching Mechanisms ofV-Doped$hboxSrZrO_3$Memory Films

The resistive switching behaviors of sputtered V-doped SrZrO
₃
(V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from Hto L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO
₃
oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory