SPIDER: capacitance modelling for VLSI interconnections

An efficient method is presented to model the parasitic capacitance of VLSI interconnections. It is valid for conductors in a stratified medium which is considered to be a good approximation for the Si-SiO/sub 2/ system of which ICs are made. The model approximates the charge density on the conductors as a continuous function on a web of edges. Each base function in the approximation has the form of a 'spider' of edges. The model has very low complexity as compared to previously presented models and achieves a high degree of precision within the range of validity of the stratified medium.<
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