Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond

As CMOS technologies move into the 90 nm node and beyond, nickel (Ni) self-aligned suicide (SALICIDE) is transitioning from R&D into mainstream SC fabrication. In this paper, advantages and challenges of Ni SALICIDE process technology will be reviewed. The extension of Ni SALICIDE technology to fully silicided metal gates (FUSI) will be discussed