Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology

For the first time, we present experimental results of a Trench Clustered IGBT structures fabricated in 1.2kV Non-Punch-Through technology. Experimental results demonstrate significantly low forward voltage drop in comparison to trench IGBTs in the same technology. Furthermore, results show that the use of dummy cells in the TCIGBT device can improve the trade-off between the on-state and turn-off losses.