Analysis of Dynamic Avalanche Phenomenon of PiN Diode Using He Ion Irradiation

The purpose of this paper is to analyze the dynamic avalanche phenomenon of conventional PiN diodes using He ion irradiation. In conventional PiN diodes, the avalanche occurs during reverse recovery operation under high voltage and low temperature conditions, resulting in two peaks and high frequency oscillation in the recovery current. The two peaks in the current were reproduced by a simulation that introduces hole trap levels. It was also confirmed that the phenomenon can be suppressed by lowering the density of the trap levels or the minority carrier lifetime of the bulk wafer.