Low on-resistance in inversion channel IEMOSFET formed on 4H-SiC C-face substrate

The inversion channel IEMOSFET has been fabricated on the 4H-SiC carbon-face substrate. The channel resistance was successfully reduced to 1 mOmegacm
²
due to the high inversion channel mobility on the carbon-face epitaxial layer. The extremely low specific on-resistance of 2.7 mOmegacm
²
was achieved with the blocking voltage of 700V. This specific on-resistance is the lowest in the normally-off MOSFET with the blocking voltage higher than 600 V