Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability

In this paper, we introduce an IGBT planar technology, which sets a new performance benchmark in terms of losses and SOA capability. The improved trade-off relationship between on-state losses V
_ce(sat)
and turn-off losses E
_off
(i.e. technology curve) was solely realized by means of planar cell enhancement. Simultaneously, high levels of turn-off ruggedness (RBSOA) were obtained with the new cell design. The enhanced-planar IGBT technology is implemented on the soft-punch-through (SPT) buffer concept for ensuring controllable and soft switching behaviour. The paper covers design details of the enhanced-planar technology and a full set of results for the 6500V EP-IGBT chip