A Novel SOI Lateral Bipolar Transistor with 30GHz fmaxand 27V BVCEOfor RF Power Amplifier Applications

This paper describes a novel lateral Bipolar Transistor build on SOI substrate for RF power amplifier applications. The lateral design concept significantly reduces parasitic resistances and capacitances, and enables very high operating frequency and good trade-off to breakdown voltages. The SOI-LBJTs are fabricated with the support from Asahi Kasei Microsystems. It delivers operating frequency (f
τ
/f
max
= 12/30GHz) and breakdown voltage (BV
CEO
= 27V) that approaches the Johnson’s limit. This is the first reported Si-BJT that reaches Johnson’s limit with BV
CEO
above 10V. The high breakdown voltage and frequency characteristics make this silicon device and ideal low-cost solution for PA design for GHz wireless communication systems.