Interaction effects between electromagnetic bandgap structures and split ring resonators in microstrip technology

In this paper interaction effects between electromagnetic bandgap (EBG) and an array of split ring resonators are analyzed in planar microstrip technology. Due to the equivalent negative epsi behavior of the EBG structure and the effective negative mu value when the SRR particles are operating in the vicinity of the quasi-static resonance frequency, a passband response is expected, as already seen in left-handed devices. Full wave simulations as well as measurement results from fabricated prototypes are presented, confirming initial predictions