Efficient ANN based noise modeling of microwave FETs against temperature

An improved noise modeling technique for microwave MESFET/HEMT versus temperature is presented. It is based on an artificial neural network (ANN) that produces noise parameters as its outputs for device temperature, S parameters and frequency at its inputs. Once trained, the proposed model can be used for efficient prediction of transistor noise parameters over a wide temperature range. Since the model is based on ANN, all noise-generating mechanisms are included and therefore it is more accurate than empirical transistor models, as it is shown on a numerical example.