The Fabrication of Single Electron Transistor by Polysilicon Thin Film and Point-Contact Lithography

In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 degK and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated