A Novel Vertical Impact Ionisation MOSFET (I-MOS) Concept

This paper presents experimental results of a novel vertical impact ionisation MOSFET (I-MOS). The device consists of a vertical gated triangular barrier diode (TBD), also know as planar doped barrier MOSFET (PDBFET). At low drain-source voltages the behaves like a conventional MOSFET. Drain-source voltages of more than 1.5 V activate gate controlled impact ionization in the sub-50 nm n-channel device, resulting in a subthreshold swing of 20 mV/decade at room temperature. The device shows an excellent I
_ON
/I
_OFF
ratio of 2.5 times 10
⁸
in this mode