Electrically Active Defects at the Interface between

The density and energy distribution of electrically active interface defects in the (100)Si/SiO
_x
/HfO
₂
system are presented. Experimental results are analysed for HfO
₂
thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550degC