Different designs for the optimization of monolithic ESBT(Emitter-Switched Bipolar Transistor)

This study is aimed to improve the electrical performance (both on-resistance and current capability) of the novel power actuator by varying its horizontal geometry. As a matter of fact the topology of the elementary cell of ESBTreg has the peculiarity that the MOSFET cells are drawn inside the emitter fingers of the bjt side: this in order to achieve the monolithical solution of cascode connection between an high voltage bjt and a low voltage MOSFET. The object of this study is the one to discover which is the best trade-off between the perimeter of the emitter finger of the bjt part and the perimeter of the channel of the MOSFET part