Submicron CBiCMOS technology with new well and buried layer formed by multiple energy ion implantation

A simple 0.6- mu m complementary BiCMOS (CBiCMOS) technology was developed without an epitaxial layer. The wells and the buried layers for all transistors were formed by only three steps of masking layers, using multiple energy ion implantation with megaelectronvolt energy. The problem of the secondary defect induced by high dose and high energy ion implementation was solved by using the rapid thermal annealing technique. The cutoff frequencies for n-p-n and p-n-p were 11 GHz and 5 GHz, respectively. Using this technology, high-performance LSIs including mixed analog/digital devices can be developed.<
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