GaN H-FET development at QinetiQ

The AlGaN/GaN HFET project at QinetiQ has the capability to grow high quality layers using MOVPE, fabricate HFETs with 0.8 and 0.25 /spl mu/m gate length and fabricate amplifiers. Here we present recent work on topics as diverse as X-ray determination of aluminium concentration, 0.25 Ohm.mm Ohmic contacts, measurement of saturated velocity, current slump and a 57 W hybrid amplifier.