High frequency low noise potentialities of down to 65 nm technology nodes MOSFETs

65 nm n-MOSFETs show state-of-the-art cut-off frequency with f
_t
= 210 GHz and microwave low noise and high gain properties (NF
_min
= 0.8 dB and G
_ass
= 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the downscaling trends.