Improved I-V Characteristics of SiC MOSFETs by TCE Thermal Gate Oxidation

The effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the I
d
-V
d
characteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device characteristics are believed to be attributed to the TCE-induced reductions of charges in the gate oxide and traps at the SiC/SiO
2
interface, and also to the gettering of charged impurities and reduction of physical defects by the chlorine incorporated in the gate oxide.