Localized growth of InAs quantum dots (QDs) on nanopatterned InP(001) surfaces

This work is devoted lo the localization of InAs quantum dots (QDs) grown by solid-source molecular beam epitaxy on nanostructured InP(001) surfaces, which will find application in quantum or classical devices operating at the wavelength of 1.55 mum. The dots are grown on the mesas or in the holes, which are designed to be the sites of privileged nucleation of the quantum dots