Structure Analysis of ZnS-SiO2 Thin Film and Patterning by Heat-Mode Lithography

A tetrahedral network structure like ZnS crystal is found to exist in the amorphous ZnS-SiO
₂
thin film. It is considered that the etching selectivity in as-deposited and annealed ZnS-SiO
₂
thin film becomes large due to the growth of ZnS crystals by annealing. There is optimum mixture rate of ZnS for patterning of Zns-SiO
₂
thin film by the heat-mode lithography, and the ZnS-SiO
₂
dots with clear and smooth edges were formed with increasing in the ZnS mixture rate to 80%