Cycling behavior of nitride charge profile in NROM-type memory cells

Cycling of NROM-type memory cells leads to a dipolar distribution inside the nitride layer. This effect is due to a mismatch between hole and electron injected profiles resulting from conventional NROM operation. An extraction technique based on CP measurements allows the detailed observation of the mismatch. The proposed model explains the relation between the charge distributions and the cycling behavior which is experimentally confirmed by changing the programming and erasing conditions