Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory

To realize TANOS-NAND flash memory, key requirements like program/erase speed, read retention, and program disturb window should be satisfied. In this work, we present 63 nm NAND-type TANOS cells to satisfy all the requirements and to replace floating-gate cells in conventional NAND flash memory without changing a circuit design and a sensing window