A new approach to current-DLTS in enhancement-mode MOSFET's: application to SIMOX devices

The current-DLTS in enhancement-mode MOSFETs is an adequate and suitable technique for the characterization of deep traps in thin SOI films. An approach is proposed which improves the modeling of the transient current by including a time-dependent mobility law and provides a modified/simplified measurement technique which avoids temperature scanning. CMOS devices have been fabricated on partially-depleted SIMOX films. Measurements have been performed on five-terminal transistors in order to avoid the parasitic influence of the current overshoot.<
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